PBSS4160DS

www.DataSheet4U.com PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 02 — 27 June 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s Dual low power switches (e.g. motors, fans) s Automotive applications 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 1 A; IB = 100 mA [2] Conditions open base [1] Min - Typ 200 Max 60 1 2 250 Unit V A A mΩ Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR 1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 sym020 Simplified outline 6 5 4 Symbol 6 5 4 TR2 1 2 3 TR1 3 3. Ordering information Table ...