PBSS3515E

www.DataSheet4U.com PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2515E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = −500 mA; IB = −50 mA [1] Symbol Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance Min - Typ 300 Max −15 −0.5 −1 500 Unit V A A mΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 Pinning Description base emitter collector 1 2 3 1 2 sym013 Simplified outline Symbol 3 3. Ordering information Table 3: Ordering information Package Name PBSS3515E SC-75 Description plastic surface mounted package; 3 leads Version SOT416 Type number 4. Ma...