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PBSS306NX
100 V, 4.5 A NPN low VCEsat (BISS) transistor
Rev. 01 — 21 August 2006 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PX.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 4 A; IB = 200 mA
[1]
Conditions open base
Min -
Typ 40
Max 100 4.5 9 56
Unit V A A mΩ
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBSS306NX
100 V, 4.5 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description emitter collector base
3 2 1
3 1
sym042
Simplified outline
Symbol
2
3. Ordering information
Table 3. Ordering information Package Name PBSS306NX SC-62 Description Version plastic surface-mounted package; collector pad for good SOT89 heat transfer; 3 leads Type number
4. Marking
Table 4. Marking codes Marking code[1] *5G Type number PBSS306NX
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PBSS306NX_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 21 August 2006
2 of 15
Philips Semiconductors
PBSS306NX
100 V, 4.5 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C
[1] [2] [3]
Conditions open emitter open base open collector
Min −65 −65
Max 100 100 5 4.5 9 0.6 1.65 2.1 150 +150 +150
Unit V V V A A W W W °C °C °C
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
2.5 Ptot (W) 2.0
(2) (1)
006aaa556
1.5
1.0
(3)
0.5
0 −75
−25
25
75
125 175 Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 P.