PBSS302NZ

PBSS302NZ 20 V, 5.8 A NPN low VCEsat transistor 12 January 2023 Product data sheet 1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors AEC-Q101 qualified 3. Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 20 V - - 5.8 A - - 11.6 A - 30 43 mΩ Nexperia 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector PBSS302NZ 20 V, 5.8 A NPN low VCEsat transistor Simplified outline 4 123 SC-73 (SOT223) Graphic symbol C B E sym123 6. Ordering information Table 3. Ordering information Type number Package Name PBSS302NZ SC-73 Description Version plastic, surface-mount...