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BLS2933-100
Microwave power LDMOS transistor
Rev. 01 — 1 August 2006 Product data sheet
1. Product...
www.DataSheet4U.com
BLS2933-100
Microwave power LDMOS
transistor
Rev. 01 — 1 August 2006 Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power
transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.
Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit. Mode of operation class AB f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 100 Gp (dB) 8 ηD (%) 40 IDq (mA) 20
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use
1.3 Applications
I S-band radar applications
Philips Semiconductors
BLS2933-100
Microwave power LDMOS
transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Symbol
1
2 3
sym112
[1]
connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLS2933-100 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperatur...
