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BLF6G20-45
UHF power LDMOS transistor
Rev. 01 — 20 February 2006 Objective data sheet
1. Product p...
www.DataSheet4U.com
BLF6G20-45
UHF power LDMOS
transistor
Rev. 01 — 20 February 2006 Objective data sheet
1. Product profile
1.1 General description
45 W LDMOS power
transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 1805 to 1880
VDS (V) 28
PL(AV) (W) 2.5
Gp (dB) 17
ηD (%) 14
ACPR (dBc) −50 [1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 350 mA: x Average output power = 2.5 W x Power gain = 17 dB (typ) x Efficiency = 14 % x ACPR = −50 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use
1.3 Applications
s RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range.
Philips Semiconductors
BLF6G20-45
UHF power LDMOS
transistor
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outli...