Document
www.DataSheet4U.com
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
Rev. 01 — 30 January 2006 Objective data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 25
Gp (dB) 18
ηD (%) 32
IMD3 (dBc) −37 [1]
ACPR (dBc) −40 [1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efficiency = 32 % x IMD3 = −37 dBc x ACPR = −40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use
Philips Semiconductors
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Symbol
BLC6G22-100 (SOT895-1)
1 3 2 2 3
sym112
1
BLC6G22LS-100 (SOT896-1) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3: Ordering information Package Name BLC6G22-100 BLC6G22LS-100 Description plastic flanged cavity package; 2 mounting slots; 2 leads plastic earless flanged cavity package; 2 leads Version SOT895-1 SOT896-1 Type number
4. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +13 +150 225 Unit V V °C °C
A
BLC6G22-100_6G22LS-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
2 of 9
Philips Semiconductors
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
5. Thermal characteristics
Table 5: Symbol Rth(j-case) Thermal characteristics Parameter Conditions Type Min Typ Max 0.54 Unit K/W thermal resistance Tcase = 80 °C; BLC6G22-100 from junction to case PL = 25 W BLC6G22LS-100 K/W 0.45
6. Characteristics
Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 150 mA VDS = 28 V; ID = 950 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 10 V; ID = 7.5 A VGS = VGS(th) + 3.75 V; ID = 5.25 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 Typ Max Unit V
2 23 27 10.5 0.1
V 5 450 µA A nA S Ω pF
V
-
7. Application information
Table 7: Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter PL(AV) Gp IRL ηD IMD3 ACPR average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 25 W PL(AV) = 25 W PL(AV) = 25 W PL(AV) = 25 W Conditions Min Typ 25 −9 −37 −40 Max Unit W dB %
18 32
dB dBc dBc
third order intermodulation distortion PL(AV) = 25 W
7.1 Ruggedness in class-AB operation
The BLC6G22-100 and BLC6G22LS-100 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 100 W (CW); f = 2170 MHz.
BLC6G22-100_6G22LS-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
3 of 9
Philips Semiconductors
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
8. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1
D F A
D1
U1 q
B C c
1 L w1
M
A
M
B
M
H
U2 3
p
E1
E
A
2
b
w2
M
C
M
Q
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.1 3.3 b 12.83 12.57 c 0.17 0.14 D 19.9 19.7 D1 20..