BC807DS

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BC807DS PNP general purpose double transistor Product specification Supersedes data of 2002 Aug 09 2002 Nov 22 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES High current (500 mA) 600 mW total power dissipation Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS General purpose switching and amplification Push-pull amplifiers Multi-phase stepper motor drivers. DESCRIPTION PNP transistor pair in a SOT457 (SC-74) plastic package. 6 5 4 6 BC807DS QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. −45 −500 −1 UNIT V mA A 5 4 MARKING TYPE NUMBER BC807DS MARKING CODE N2 1 2 3 MAM457 TR2 TR1 1 2 3 Top view Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C; note 1 − MAX. −50 −45 −5 −500 −1 −200 370 +150 150 +150 UNIT Per transistor unless otherwise specified VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2002 Nov 22 2 total power dissipation 600 mW collector-b...