IS62LV12816BLL

www.DataSheet4U.com IS62LV12816BLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 55, 70, 100 ns CMOS low power operation – 120 mW (typical) operating – 6 µW (typical) CMOS standby TTL compatible interface levels Single 2.7V-3.45V VCC power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm) ISSI DESCRIPTION ® FEBRUARY 2001 The ISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62LV12816BLL is packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm). FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K x 16 MEMORY ARRAY VCC GND I/O0-I/O7 Lower Byte I/O...