NUS5530MN

NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. Features Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) Higher Efficiency Extending Battery Life Logic Level Gate Drive (MOSFET) Performance DFN Package This is a Pb−Free Device Applications Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS FOR P−CHANNEL FET (TA = 25°C unless otherwise noted) Rating Steady Symbol 5 sec State Unit Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Note 1) VDS −20 V VGS "12 V ID A −5.3 −3.9 −3.8 −2.8 IDM "20 A IS −5.3 −3.9 A Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C PD W 2.5 1.3 1.3 0.7 Operating Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface ...