NTLJF3118N
Power MOSFET and Schottky Diode
20 V, 4.6 A, N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Packa...
NTLJF3118N
Power MOSFET and
Schottky Diode
20 V, 4.6 A, N−Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm WDFN Package
Features
WDFN 2x2 mm Package Provides Exposed Drain Pad for
Excellent Thermal Conduction
Footprint Same as SC−88 Package 1.8 V VGS Rated RDS(on) Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Low VF 2 A
Schottky Diode This is a Pb−Free Device
Applications
DC−DC Boost/Buck Converter Low Voltage Hard Disk DC Power Source
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12 V
Continuous Drain Current Steady TA = 25°C
ID
(Note 1)
State TA = 85°C
3.8
A
2.8
t ≤ 5 s TA = 25°C
4.6
Power Dissipation (Note 1)
Steady
PD
State TA = 25°C
t ≤5 s
1.5 W 2.2
Continuous Drain Current
TA = 25°C
ID
(Note 2)
Steady TA = 85°C
Power Dissipation (Note 2)
State TA = 25°C
PD
2.6
A
1.9
0.7
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IDM TJ, TSTG IS TL
18
A
−55 to °C 150
1.8
A
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 2 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces)....
