NTLJD3119C

www.DataSheet4U.com NTLJD3119C Power MOSFET Features 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Complementary N−Channel and P−Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermal Conduction Footprint Same as SC−88 Package Leading Edge Trench Technology for Low On Resistance 1.8 V Gate Threshold Voltage Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device V(BR)DSS N−Channel 20 V http://onsemi.com RDS(on) MAX 65 mW @ 4.5 V 75 mW @ 2.5 V 120 mW @ 1.8 V P−Channel −20 V 100 mW @ −4.5 V 135 mW @ −2.5 V 200 mW @ −1.8 V ID MAX 3.8 A 2.0 A 1.7 A −4.1 A −2.0 A −1.6 A Applications Synchronous DC−DC Conversion Circuits Load/Power Management of Portable Devices like PDA’s, Cellular Phones and Hard Drives Color Display and Camera Flash Regulators Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) N−Channel Continuous Drain Current (Note 2) P−Channel Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State t≤5s Steady State t≤5s Steady State t≤5s Steady State Steady State N−Ch P−Ch N−Ch P−Ch TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 85°C PD IDM TJ, TSTG TL ID MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol VDSS VGS ID Value 20 −20 ±8.0 3.8 2.8 4.6 −3.3 −2.4 −4.1 1.5 2.3 2.6 1.9 −2.3 −...