NTLGD3502N

NTLGD3502N Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package Features ăExposed Drain Package ăExcellent Thermal Resistance for Superior Heat Dissipation ăLow Threshold Levels ăLow Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin Environments ăThis is a Pb-Free Device Applications ăDC-DC Converters (Buck and Boost Circuits) ăPower Supplies ăHard Disk Drives MOSFET I MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t ≤ 5.0 s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 20 ±20 4.3 3.0 5.8 1.74 V V A W Pulsed Drain Current t ≤10 ms IDM Operating Junction and Storage Temperature TJ, TSTG 17.2 -55 to 150 A °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS 1.6 A TL 260 °C MOSFET II MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t ≤ 5.0 s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 20 ±12 3.6 2.5 4.6 1.74 V V A W Pulsed Drain Current t ≤10 ms IDM Operating Junction and Storage Temperature TJ, TSTG 13.8 -55 to 150 A °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) ...