NTD4810NH

www.DataSheet4U.com NTD4810NH Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 10 mW @ 10 V 16.7 mW @ 4.5 V D ID MAX 54 A Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2) Power Dissipation (RqJA) (Note 2) Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current tp=10ms Current Limited by Package TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 "20 10.8 8.4 2.0 8.6 6.7 1.28 54 42 50 120 45 −55 to 175 41 6.0 66 W A A YWW 48 10NHG °C A V/ns mJ 4 Drain W A W 1 2 A 3 DPAK CASE 369C (Bent Lead) STYLE 2 Unit V V A 4 G N−Channel S 4 4 1 2 3 3 IPAK IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK) 2 3 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 10NHG 4 Drain YWW 48 10NHG Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (...