NSS20201MR6T1G

www.DataSheet4U.com NSS20201MR6T1G 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Max 20 40 5.0 2.0 3.0 Unit V V V A A 6 5 4 3 http://onsemi.com 20 VOLTS 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Di...