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NLAS4717 Dataheets PDF



Part Number NLAS4717
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual SPDT Analog Switch
Datasheet NLAS4717 DatasheetNLAS4717 Datasheet (PDF)

NLAS4717 Analog Switch, High Bandwidth, Dual SPDT The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw (SPDT) switch featuring two low RDS(on) of 4.5 W at 3.0 V. The device also features guaranteed Break-Before-Make (BBM) switching, assuring the switches never short the driver. The NLAS4717 is available in two small size packages: ♦ăMicro10: 3.0 x 5.0 mm ♦ăFlip-Chip-10: 2.0 x 1.5.

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NLAS4717 Analog Switch, High Bandwidth, Dual SPDT The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw (SPDT) switch featuring two low RDS(on) of 4.5 W at 3.0 V. The device also features guaranteed Break-Before-Make (BBM) switching, assuring the switches never short the driver. The NLAS4717 is available in two small size packages: ♦ăMicro10: 3.0 x 5.0 mm ♦ăFlip-Chip-10: 2.0 x 1.5 mm Features •ăLow RDS(on): 4.5 W @ 3.0 V •ăMatching Between the Switches ±0.5 W •ăWide Low Voltage Range: 1.8 V to 5.5 V •ăHigh Bandwidth > 40 MHz •ă1.65 V to 5.5 V Operating Range •ăLow Threshold Voltages on Pins 4 and 8 (CTRL Pins) •ăUltra-Low Charge Injection ≤ 6.0 pC •ăLow Standby Current – ICC = 1.0 nA (Max) @ TA = 25°C •ăOVT* on Pins 4 and 8 (CTRL Logic Pins) •ăPb-Free Packages are Available Typical Applications •ăCell Phones •ăPDAs •ăMP3s •ăDigital Still Cameras Important Information •ăESD Protection: HBM = 2000 V, MM = 200 V •ăLatchup Max Rating: 200 mA (Per JEDEC EIA/JESD78) •ăPin-to-Pin Compatible with MAX4717 *OVT •ăOvervoltage Tolerance (OVT) specific pins to operate higher than normal supply voltages, with no damage to the devices or to signal integrity. http://onsemi.com MARKING DIAGRAMS A1 FLIP-CHIP-10 CASE 489AA 4717 AYWWĂG G A1 Micro10 CASE 846B 10 4717 AYWĂG G 1 A = Assembly Location Y = Year W, WW = Work Week G = Pb-Free Package FUNCTION TABLE IN_ NO_ NC_ 0 OFF ON 1 ON OFF ORDERING INFORMATION Device Package Shipping† NLAS4717FCT1 Flip-Chip-10 3000 / Tape & Reel NLAS4717FCT1G Flip-Chip-10 (Pb-Free) NLAS4717MR2 Micro10 3000 / Tape & Reel 4000 / Tape & Reel NLAS4717MR2G Micro10 (Pb-Free) 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ©Ă Semiconductor Components Industries, LLC, 2007 1 May, 2007 - Rev. 9 Publication Order Number: NLAS4717/D NLAS4717 GND VCC 1 10 NO2 B1 NC1 C1 A1 NC2 NO1 2 9 COM2 COM1 3 IN1 4 NC1 5 Micro10 (Top View) 8 IN2 7 NC2 6 GND IN1 C2 COM1 C3 NO1 C4 B4 VCC Flip-Chip-10 (Top View) A2 IN2 A3 COM2 A4 NO2 Figure 1. Device Circuit Diagrams and Pin Configurations MAXIMUM RATINGS Symbol Parameter Value Unit V+ Positive DC Supply Voltage *0.5 to )7.0 V VIS Analog Input Voltage (VNO, VNC, or VCOM) (Note 1) *0.5 v VIS v VCC )0.5 V VIN Digital Select Input Voltage *0.5 v VI v)7.0 V IIK DC Current, Into or Out of Any Pin (Continuous) $100 mA IPK Peak Current (10% Duty Cycle) $200 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Signal voltage on NC, NO, and COM exce.


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