NID5003N

www.DataSheet4U.com NID5003N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 20 A, Single N−Channel, DPAK HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features http://onsemi.com VDSS (Clamped) 42 V ID MAX (Limited) 20 A* RDS(on) TYP 42 mW @ 10 V Drain Overvoltage Protection MPWR Gate Input RG Short Circuit Protection/Current Limit Thermal Shutdown with Automatic Restart IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection ESD Protection Temperature Limit Current Limit Current Sense Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage Drain Current Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) ...