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H11G3X Dataheets PDF



Part Number H11G3X
Manufacturers ISOCOM COMPONENTS
Logo ISOCOM COMPONENTS
Description HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR
Datasheet H11G3X DatasheetH11G3X Datasheet (PDF)

www.DataSheet4U.com H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 2.54 7.0 6.0 1.2 7.62 1 2 3 Dimensions in mm 6 5 4 7.62 6.62 4.0 DESCRIPTION 3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an in.

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www.DataSheet4U.com H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 2.54 7.0 6.0 1.2 7.62 1 2 3 Dimensions in mm 6 5 4 7.62 6.62 4.0 DESCRIPTION 3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor to 0.26 3.35 0.5 optimise switching speed and elevated temperature characteristics in a standard 6pin ABSOLUTE MAXIMUM RATINGS dual in line plastic package. (25°C unless otherwise specified) 13° Max FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (H11G1 - 100V min.) l Low collector dark current :100nA max. at 80V VCE l Low input current 1mA IF l Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Peak Forward Current (1µs pulse, 300pps) Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO H11G3, H11G2, H11G1 Collector-base Voltage BVCBO H11G3, H11G2, H11G1 Emitter-baseVoltage BVECO Power Dissipation POWER DISSIPATION 55, 80, 100V 55, 80, 100V 6V 200mW 60mA 3A 3V 100mW APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT OPTION G 7.62 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 10.16 260mW ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 7/12/00 DB92008m-AAS/a1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO ) H11G1 H11G2 H11G3 Collector-base Breakdown (BVCBO ) H11G1 H11G2 H11G3 Emitter-base Breakdown (BVEBO ) Collector-emitter Dark Current (ICEO ) H11G1 H11G2 H11G3 Collector Output Current ( IC ) H11G1, H11G2 H11G1, H11G2 H11G3 Collector-emitter Saturation Voltage VCE(SAT) H11G1, H11G2 H11G1, H11G2 H11G3 Input to Output Isolation Voltage VISO Input-output Isolation Resistance Input-output Capacitance Turn-on Time Turn-off Time RISO Cf ton toff MIN TYP MAX UNITS 1.2 3 10 1.5 V V µA V V V V V V V 100 100 100 nA nA nA TEST CONDITION IF = 10mA IR = 10µA VR = 6V IC = 1mA IC = 1mA IC = 1mA IC = IC = IC = IE = 100µA 100µA 100µA 0.1mA Output 100 80 55 100 80 55 6 VCE = 80V VCE = 60V VCE = 30V 10mA IF , 1.2V VCE 1mA IF , 5V VCE 1mA IF , 5V VCE 1mA IF , 1mA IC 16mA IF , 50mA IC 20mA IF , 50mA IC See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz IF= 10mA, VCC = 5V, RL = 100Ω, f = 30Hz, pulse width equal to or less than 300µs Coupled 100 5 2 1.0 1.2 1.2 5300 7500 1011 0.5 5 100 mA mA mA V V V VRMS VPK Ω pF µs µs Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC Input IF = 10mA 100Ω ton tr Input Output Output 10% 90% 10% 90% toff tf 7/12/00 DB92008m-AAS/a1 Collector Power Dissipation vs. Ambient Temperature 250 Collector power dissipation P C (mW) 200 100 Normalized Output Current vs. Collector-emitter Voltage 50mA Normalized output current 10 10mA 1.0 IF = 1mA 0.1 Normalized to IF = 1mA (300µs pulse), VCE = 5V 0 1 2 3 4 5 6 150 100 50 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature 80 70 0.01 Collector-emitter voltage VCE ( V ) Normalized Output Current vs. Ambient Temperature 100 50mA Normalized output current 10 10mA 1.0 IF = 1mA 0.1 Normalized to IF = 1mA (300µs pulse), VCE = 5V TA = 25 °C -50 -25 0 25 50 75 Ambient temperature TA ( °C ) Collector Dark Current vs. Ambient Temperature 100k (nA) VCE = 80V 10k 100 Forward current I F (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( °C ) Normalized Output Current vs. Input Current 100 0.01 Normalized output current 10 Collector dark current I CEO 1k 1.0 Normalized to IF = 1mA (300µs pulse), VCE = 5V TA = 25 °C 0.1 1.0 10 100 50V VCE 100 0.1 10 1 -30 0 25 50 VCE = 10V 75 100 0.01 Input current IF (mA) 7/12/00 Ambient temperature TA ( °C ) DB92008m-AAS/a1 .


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