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DIM200WKS12-A000 Dataheets PDF



Part Number DIM200WKS12-A000
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description IGBT Chopper Module - Upper Arm Control
Datasheet DIM200WKS12-A000 DatasheetDIM200WKS12-A000 Datasheet (PDF)

www.DataSheet4U.com DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces February 2004 version, issue PDS5969-2.0 DS5969-3.0 June 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 200A 400A *(Measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I I I I Choppers Motor Controllers Induction Heating Resonant Converter.

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www.DataSheet4U.com DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces February 2004 version, issue PDS5969-2.0 DS5969-3.0 June 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 200A 400A *(Measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I I I I Choppers Motor Controllers Induction Heating Resonant Converters Power Supplies 4(G1) 5(E1) 1(K,E) 2(A) 3(C1) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200WKS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Chopper circuit diagram ORDERING INFORMATION Order As: DIM200WKS12-A000 Note: When ordering, please use the whole part number. Outline type code: W (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8 www.dynexsemi.com www.DataSheet4U.com DIM200WKS12-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 80˚C 1ms, Tcase = 115˚C Tcase = 25˚C, Tj = 150˚C VR = 0, tp = 10ms, Tvj = 125˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS VGE = 0V Test Conditions Max. 1200 ±20 200 400 1390 6.25 2500 10 Units V V A A W kA2s V PC THERMAL AND MECHANICAL RATINGS Internal insulation: Al2O3 Baseplate material: Cu Creepage distance: 24mm Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Clearance: 13mm CTI (Critical Tracking Index): 175 Test Conditions Continuous dissipation junction to case Min. - Typ. - Max. 90 Units ˚C/kW Rth(j-c) Thermal resistance - diode (per arm) (Antiparallel and freewheel diode) Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode - - 194 ˚C/kW Rth(c-h) Thermal resistance - case to heatsink (per module) - - 15 ˚C/kW Tj Junction temperature –40 3 2.5 - 150 125 125 5 5 ˚C ˚C ˚C Nm Nm Tstg - Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com www.DataSheet4U.com DIM200WKS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current (IGBT and Diode arm) IGES VGE(TH) VCE(sat)† Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C VGE = ±20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125˚C IF IFM VF† Diode forward current Diode maximum forward current Diode forward voltage (IGBT and Diode arm) Cies LM RINT SCData Input capacitance Module inductance - per arm Internal transistor resistance Short circuit. ISC DC tp = 1ms IF = 200A IF = 200A, Tcase = 125˚C VCE = 25V, VGE = 0V, f = 1MHz Tj = 125˚C, VCC = 900V, tp ≤ 10µs, VCE(max) = VCES – L*. di/dt IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM I1 I2 Min. 4.5 Typ. 5.5 2.2 2.6 2.2 2.3 33 20 0.23 1375 1125 Max. 0.25 6 1 6.5 2.7 3.1 200 400 2.5 2.6 Units mA mA µA V V V A A V V nF nH mΩ A A Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/8 www.dynexsemi.com www.DataSheet4U.com DIM200WKS12-A000 ELECTRICAL CHARACTERISTICS - IGBT ARM Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery ch.


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