DIM200WHS17-A000

www.DataSheet4U.com DIM200WHS17-A000 DIM200WHS17-A000 Half Bridge IGBT Module Replaces issue December 2003, version FDS5673-2.3 FDS5673-3.0 January 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I I Inverters Motor Controllers Induction Heating 7(E2) 6(G2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200WHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 1(E1C2) 2(E2) 3(C1) 4(G1) 5(E1) Fig. 1 Half bridge circuit diagram ORDERING INFORMATION Order As: DIM200WHS17-A000 Note: When ordering, please use the whole part number. Outline type code: W (See package details for further information) Fig. 2 Module outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8 www.dynexsemi.com www.DataSheet4U...