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DIM200PHM33-F000
DIM200PHM33-F000
Half Bridge IGBT Module
Preliminary Information
DS5606-1.2 June ...
www.DataSheet4U.com
DIM200PHM33-F000
DIM200PHM33-F000
Half Bridge IGBT Module
Preliminary Information
DS5606-1.2 June 2003
FEATURES
I I I I
KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.0V 200A 400A
Soft Punch Through Silicon 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability
* Measured at auxiliary terminals.
APPLICATIONS
I I I
1(E1/C2) 2(C1) 5(E1) 4(G1) 3(E2) 7(E2) 6(G2)
High Reliability Inverters Motor Controllers Traction Auxiliaries
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200PHM33-F000 is a half bridge 3300V soft punch through, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
8(C1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As: DIM200PHM33-F000 Note: When ordering, please use the whole part number.
Outline type code: P (See package details for further information) Fig. 2 Electrical connections ...