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DIM600BSS12-A000 Dataheets PDF



Part Number DIM600BSS12-A000
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Single Switch IGBT Module
Datasheet DIM600BSS12-A000 DatasheetDIM600BSS12-A000 Datasheet (PDF)

www.DataSheet4U.com DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 DS5692-3.0 June 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 600A 1200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I Inverters Motor Controllers The Powerline range of high power modules includes ha.

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www.DataSheet4U.com DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 DS5692-3.0 June 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 600A 1200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I Inverters Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM600BSS12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 2(E) 5(E1) 3(G1) 1(C) 4(C1) Fig. 1 Single switch circuit diagram ORDERING INFORMATION Order As: DIM600BSS12-A000 Note: When ordering, please use the whole part number. Outline type code: B (See package details for further information) Fig. 2 Module outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9 www.dynexsemi.com www.DataSheet4U.com DIM600BSS12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 80˚C 1ms, Tcase = 115˚C Tcase = 25˚C, Tj = 150˚C VR = 0, tp = 10ms, Tvj = 125˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS VGE = 0V Test Conditions Max. 1200 ±20 600 1200 4166 56 2500 10 Units V V A A W kA2s V PC 2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com www.DataSheet4U.com DIM600BSS12-A000 THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Symbol Rth(j-c) Al2O3 Cu 20mm Clearance: 11mm CTI (Critical Tracking Index): 425 Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Min. - Typ. - Max. 30 Units ˚C/kW Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case - - 67 ˚C/kW Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Transistor Diode - - 15 ˚C/kW Tj Junction temperature –40 3 2.5 1.1 - 150 125 125 5 5 2 ˚C ˚C ˚C Nm Nm Nm Tstg - Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 Electrical connections - M4 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9 www.dynexsemi.com www.DataSheet4U.com DIM600BSS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(sat)† Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 30mA, VGE = VCE VGE = 15V, IC = 600A VGE = 15V, IC = 600A, , Tcase = 125˚C IF IFM VF† Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 600A IF = 600A, Tcase = 125˚C Cies LM RINT SCData Input capacitance Module inductance Internal transistor resistance Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz Tj = 125˚C, VCC = 900V, tp ≤ 10µs, VCE(max) = VCES – L*. di/dt IEC 60747-9 I1 I2 Min. 4.5 Typ. 5.5 2.2 2.6 2.2 2.3 100 20 0.23 4100 3400 Max. 1 12 2 6.5 2.7 3.1 600 1200 2.5 2.6 Units mA mA µA V V V A A V V nF nH mΩ A A Note: † Measured at the power busbars and not the auxiliary terminals L* is the circuit inductance + LM 4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com www.DataSheet4U.com DIM600BSS12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery ener.


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