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SMF5V0A to SMF51A
Vishay Semiconductors
Surface Mount ESD Protection Diodes
Features
• • • • For surface mounted applications Low-profile package e3 Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 61000-4-2 (IEC801-2) • Ideal for EFT protection of data lines in accordance with IEC 61000-4-4 (IEC801-4) • IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) • Low incremental surge resistance, excellent clamping capability • 200 W peak pulse power capability with a 10/1000 µs waveform, repetition rate (duty cycle): 0.01 % • Very fast response time • High temperature soldering guaranteed: 260 °C/ 10 seconds at terminals • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic case Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity:The band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: approx. 15 mg Packaging Codes/Options: GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Peak pulse power dissipation Test condition 10/1000 µs waveform1) 8/20 µs waveform Peak pulse current Peak forward surge current
1) 1)
Symbol PPPM PPPM IPPM IFSM
Value 200 1000 next Table 20
Unit W W A A
10/1000 µs waveform1) 8.3 ms single half sine-wave
Non-repetitive current pulse and derated above TA = 25 °C
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Thermal resistance
2)
Test condition
Symbol RthJA Tstg, TJ
Value 180 - 55 to + 150
Unit K/W °C
Operation junction and storage temperature range 2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( ≥ 40 µm thick)
Document Number 85811 Rev. 2.0, 29-Apr-05
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SMF5V0A to SMF51A
Vishay Semiconductors Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. VF = 3.5 V at IF = 12 A (uni-directional only) Partnumber Marking Code UNI Breakdown Voltage1) Test Current Stand-off Voltage Maximum Reverse Leakage @ VWM ID µA 400 400 250 100 50 25 10 5.0 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Peak Pulse Surge Current 2,3) V(BR) @ IT VWM IPPM @ IPPM VC V 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 Cj @ VR = 0 V, f = 1 MHz pF typ 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 21.7 19.4 17.9 16.7 15.5 14.7 13.9 13.5 11.8 11.0 10.1 9.3 8.6 8.2 7.7 7.2 5.8 6.2 5.6 5.1 4.8 4.4 4.1 3.8 3.4 3.1 2.9 2.8 2.6 2.4 1030 1010 850 750 730 670 660 620 570 460 440 420 370 350 340 310 305 207 265 240 225 210 205 190 180 165 160 155 150 145 Maximum Clamping Voltage Junction Capacitance
V min SMF5V0A SMF6V0A SMF6V5A SMF7V0A SMF7V5A SMF8V0A SMF8V5A SMF9V0A SMF10A SMF11A SMF12A SMF13A SMF14A SMF15A SMF16A SMF17A SMF18A SMF20A SMF22A SMF24A SMF26A SMF28A SMF30A SMF33A SMF36A SMF40A SMF43A SMF45A SMF48A SMF51A
1) 2) 3)
mA
V
A
AE AG AK AM AP AR AT AV AX AZ BE BG BK BM BP BR BT BV BX BZ CE CG CK CM CP CR CT CV CX CZ
6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7
Pulse test tp ≤ 5.0 ms Surge current waveform 10/1000 µs All terms and symbols are consistent with ANSI/IEEE C62.35
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Document Number 85811 Rev. 2.0, 29-Apr-05
SMF5V0A to SMF51A
Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10 Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C
PPPM - Peak Pulse Power (kW)
1
0.1
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0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
td - Pulse Width (sec.)
Figure 1. Peak Pulse Power Rating
Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, %
100
75
50
25
0
0
25
50
75
100
125
150
175
200
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TA - Ambient Temperature (°C)
Figure 2. Pulse Derating Curve
150
IPPM - Peak Pulse Current, % IRSM
tr = 10 µ s Peak Value IPPM
100
TJ = 25 °C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM
Half Value - IPP 2 IPPM 50 10/1000 sec. Waveform as defined by R.E.A.
td 0 0 1.0 2.0 3.0 4.0
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t - Time (ms)
Figure 3. Pulse Waveform
Document Number 85811 Rev. 2.0, 29-Apr-05
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SMF5V0A to SMF51A
Vishay Semiconductors Package Dimensions in mm (Inches)
0.85 (0.033) 0.35 (0.014)
3.9 (0.152) 3.5 (0.137) 5
0.99 (0.039) 0.97 (0.038)
0.16 (0.006)
5
Z
Detail Z enlarged
Cathode Band Top View
1.9 (0.074) 1.7 (0.066) 0.10 max
1.2 (0.047) 0.8 (0.031)
2.9 .