MMVL809T1

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL809T1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. 4.5 – 6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 1 Controlled and Uniform Tuning Ratio Surface Mount Package Available in 8 mm Tape and Reel Device Marking: 5K 1 CATHODE 2 ANODE 2 PLASTIC, CASE 477 SOD– 323 ORDERING INFORMATION Device MMVL809T1 Package SOD–323 Shipping 3000 / Tape & Reel MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 20 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20 — Typ — — Max — 50 Unit Vdc nAdc Ct, Diode Capacitance Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 500 MHz Device Min Nom Max Min MMVL809T1 4.5 5.3 6.1 75 1. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Max 1.8 2.6 MMVL809T1–1/2 LESHAN RADIO COMPANY, LTD. MMVL809T1 TYPICAL CHARACTERISTICS 1...