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LESHAN RADIO COMPANY, LTD.
High Voltage Silicon Pin Diode
These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic surface mount package for economical, high–volume consumer and industrial requirements. • Long Reverse Recovery Time trr = 300 ns (Typ) • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability • Low Series Resistance @ 100 MHz – RS = 0.7 Ω (Typ) @ IF = 10 mAdc • Reverse Breakdown Voltage = 200 V (Min) • Device Marking: 4R
MMVL3700T1
SILICON PIN SWITCHING DIODE
1
2
PLASTIC, CASE 477 SOD– 323
ORDERING INFORMATION
Device MMVL3700T1 Package SOD–323 Shipping 3000 / Tape & Reel
1 CATHODE
2 ANODE
MAXIMUM RATINGS
Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 200 20 Max 200 1.57 635 150 Unit Vdc mAdc Unit mW mW/°C °C/W °C
THERMAL CHARACTERISTICS
RθJA TJ, Tstg *FR–4 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse BreakdownVoltage (I R = 10 µAdc) Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) Series Resistance (IF = 10 mAdc) Reverse Leakage Current (VR = 150 Vdc) Reverse Recovery Time (IF = IR = 10 mAdc) Symbol V(BR)R CT RS IR trr Min 200 — — — — Typ — — 0.7 — 300 Max — 1.0 1.0 0.1 — Unit Vdc pF Ω µAdc ns
MMVL3700T1–1/2
LESHAN RADIO COMPANY, LTD.
MMVL3700T1
TYPICAL CHARACTERISTICS
I F , FORWARD CURRENT (mA)
RS, SERIES RESISTANCE (Ω)
I F, FORWARD CURRENT (mA)
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Series Resistance
Figure 2. Forward Voltage
CT, DIODE CAPACITANCE (pF)
I R, REVERSE CURRENT (µ A)
VR, REVERSE VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
Figure 4. Leakage Current
MMVL3700T1–2/2
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