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DTA114YM3T5G Dataheets PDF



Part Number DTA114YM3T5G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Digital Transistor
Datasheet DTA114YM3T5G DatasheetDTA114YM3T5G Datasheet (PDF)

www.DataSheet4U.com DTA114EM3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual compo.

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www.DataSheet4U.com DTA114EM3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−723 package which is designed for low power surface mount applications. http://onsemi.com PNP SILICON DIGITAL TRANSISTORS • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−723 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 3 MARKING DIAGRAM XX M 2 1 SOT−723 CASE 631AA Style 1 xx M = Specific Device Code (See Marking Table on page 2) = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2004 1 February, 2004 − Rev. 0 Publication Order Number: DTA114EM3/D DTA114EM3T5G Series ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device DTA114EM3T5G DTA124EM3T5G* DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G* DTA123EM3T5G* DTA143EM3T5G* DTA143ZM3T5G* DTA124XM3T5G DTA123JM3T5G* DTA115EM3T5G DTA144WM3T5G* Marking 6A 6B 6C 6D 6E 6F 6H 6J 6K 6L 6M 6N 6P R1 (K) 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47 ∞ ∞ 2.2 4.7 47 47 47 100 22 Package Shipping† SOT−723 (Pb−Free) 8000/Tape & Reel *Available upon request †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation, FR−4 Board (Note 2.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad Symbol PD 260 2.0 RqJA PD 600 4.8 RqJA TJ, Tstg 205 −55 to +150 mW mW/°C °C/W °C 480 mW mW/°C °C/W Max Unit http://onsemi.com 2 DTA114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G ICBO ICEO IEBO − − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 − − nAdc nAdc mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 − 60 100 140 140 250 250 15 27 140 130 140 150 140 − − − − − − − − − − − − − − 0.25 Vdc Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTA123EM3T5G (IC = 10 mA, IB = 1 mA) DTA114TM3T5G/DTA143TM3T5G/ DTA143ZM3T5G/DTA124XM3T5G/DTA143EM3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) DTA114EM3T5G DTA124EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA144EM3T5G DTA115EM3T5G DTA144WM3T5G VCE(sat) VOL − − − − − − − − − − − − − VOH 4.9 − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 − Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) DTA114TM3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Vdc http://onsemi.com 3 DTA114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°.


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