DF3A6.8LFE

www.DataSheet4U.com DF3A6.8LFE TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.8LFE Diodes for Protecting Against ESD Unit: mm · Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. Zener voltage correspond to E24 Series. Low total capacitance: CT = 6.0 pF (typ.) · · Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 -55 to 125 Unit mW °C °C JEDEC JEITA TOSHIBA ― ― 1-2SA1A Electrical Characteristics (Ta = 25°C) Characteristics Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Total capacitance Symbol VZ ZZ ZZK IR CT IZ = 5 mA IZ = 5 mA IZ = 0.5 mA VR = 5 V VR = 0 V, f = 1 MHz Test Condition Min 6.5 ¾ ¾ ¾ ¾ Typ. 6.8 ¾ ¾ ¾ 6.0 Max 7.1 50 100 0.5 ¾ Unit V W W mA pF Guaranteed Level of ESD Immunity Marking Equivalent Circuit (top view) Test Condition IEC61000-4-2 (contact discharge) ESD Immunity Level ±8 kV CU Q1 Q2 1 2002-01-16 DF3A6.8LFE IZ – VZ 100 m 100 IF – VF (A) 1 m Forward current IF 1 2 3 4 5 6 7 8 9 10 Zener current IZ (mA) 10 10 m 100 m 10 m 1m 0 1 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Zener voltage VZ (V) Forward voltage VF (V) CT – VR 10 Ta = 25°C f = 1 MHz 1 0 1 2 3 4 5 6 7 8 Reverse voltage VR (V) 2 2002-01-16 DF3A6.8LFE RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to ...