BAV70TT1

www.DataSheet4U.com BAV70TT1 Preferred Device Dual Switching Diode Features Pb−Free Package May be Available.* The G−Suffix Denotes a Pb−Free Lead Finish http://onsemi.com ANODE 1 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc 3 Symbol PD 225 1.8 RqJA PD 360 2.9 RqJA TJ, Tstg 345 −55 to +150 mW mW/°C °C/W A4 °C 555 mW mW/°C °C/W Max Unit 1 2 3 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (1) TA = 25°C Derated above 25°C Thermal Resistance, Junction to Ambient (1) Total Device Dissipation, FR−4 Board (2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad CASE 463 SOT−416/SC−75 STYLE 3 DEVICE MARKING ORDERING INFORMATION Device BAV70TT1 BAV70TT1G Package SOT−416 SOT−416 (Pb-Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 1 Decemb...