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PJ2N3906 PNP Epitaxial Silicon Transistor
GENERAL PURPO SE TRANSISTO R
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Collector-Emitter Volt...
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PJ2N3906
PNP Epitaxial Silicon
Transistor
GENERAL PURPO SE TRANSISTO R
Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: P C (max) = 625 mW
.
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj T stg Value 40 40 5 200 625 150 -55~150 Unit V V V mA mW ℃ ℃ Device PJ2N3906CT PJ2N3906CX Operating Temperature -20℃~+85℃ Package TO-92 SOT-23
P in : 1. Emitter 2. Base 3. Collector P in : 1. Base 2. Emitter 3. Collector
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS (T a = 25℃) Characte ristic
Collector-Base Breakdown Voltage *Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Curent Base Cut-off Current *DC Current Gain
Symbol
BVCBO BVCEO BVEBO ICEX IBL hFE
Te st Conditions
IC= 10μA , IE =0 IC= 1mA , IB=0 IE =10μA , IC=0 VCE = 30V , VBE = 3V VCE = 30V , VBE = 3V Ic =0.1mA, VCE =1V Ic =1mA, VCE =1V Ic=10mA; VCE =1V Ic =50 mA, VCE =1V Ic =100 mA, VCE =1V IC= 10 mA , IB=1mA IC= 50mA , IB=5mA IC= 10 mA , IB=1mA IC= 50mA , IB=5mA VCB =5V, IE =0 f=1MHz Ic =10 mA, VCE =20V f=100MHz Vcc =3 V, VBE =0.5V Ic =10 mA, IB1 =1mA Vcc =3V, Ic =1mA IB1=IB2=1 mA
Min
40 40 6
Typ
Max
Uni t
V V V nA nA
50 50 60 80 100 60 30 0.65 300 0.25 0.4 0.85 0.95 4.5
*Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Output Capa...