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IRL2505LPBF Dataheets PDF



Part Number IRL2505LPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRL2505LPBF DatasheetIRL2505LPBF Datasheet (PDF)

www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET Power MOSFET D IRL2505LPbF IRL2505SPbF ® VDSS = 55V RDS(on) = 0.008Ω PD - 95577 G ID = 104A† S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b.

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www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET Power MOSFET D IRL2505LPbF IRL2505SPbF ® VDSS = 55V RDS(on) = 0.008Ω PD - 95577 G ID = 104A† S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2505L) is available for lowprofile applications. D 2 Pak TO-262 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 104† 74 360 3.8 200 1.3 ±16 500 54 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. ––– ––– Max. 0.75 40 Units °C/W 07/19/04 www.irf.com 1 IRL2505S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) V GS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 ––– ––– ––– ––– 1.0 59 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.035 ––– V/°C Reference to 25°C, ID = 1mA… ––– 0.008 VGS = 10V, ID = 54A „ ––– 0.010 Ω VGS = 5.0V, ID = 54A „ ––– 0.013 VGS = 4.0V, ID = 45A „ ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 54A… ––– 25 VDS = 55V, VGS = 0V µA ––– 250 VDS = 44V, VGS = 0V, T J = 150°C ––– 100 VGS = 16V nA ––– -100 VGS = -16V ––– 130 ID = 54A ––– 25 nC VDS = 44V ––– 67 VGS = 5.0V, See Fig. 6 and 13 „… 12 ––– VDD = 28V 160 ––– ID = 54A ns 43 ––– RG = 1.3Ω, VGS = 5.0V 84 ––– RD = 0.50Ω, See Fig. 10 „… Between lead, 7.5 ––– nH and center of die contact 5000 ––– VGS = 0V 1100 ––– pF VDS = 25V 390 ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 104† showing the A G integral reverse ––– ––– 360 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V „ ––– 140 210 ns TJ = 25°C, IF = 54A ––– 650 970 nC di/dt = 100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 240µH RG = 25Ω, IAS = 54A. (See Figure 12) ƒ ISD ≤ 54A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRL2505 data and test conditions † Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRL2505S/LPbF 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , Drain-to-Source Current (A) 100 ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 2.5V 10 10 2.5V 20µs PULSE WIDTH T J = 25°C 1 10 1 0.1 A 100 1 0.1 20µs PULSE WIDTH T J = 175°C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS .


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