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Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET Power MOSFET
D
IRL2505LPbF IRL2505SPbF ®
VDSS = 55V RDS(on) = 0.008Ω
PD - 95577
G
ID = 104A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2505L) is available for lowprofile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max. 104
74 360 3.8 200 1.3 ±16 500 54 20 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
0.75 40
Units
°C/W 07/19/04
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1
IRL2505S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) V GS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 1.0 59 Typ. Max. Units Conditions V VGS = 0V, ID = 250µA 0.035 V/°C Reference to 25°C, ID = 1mA
0.008 VGS = 10V, ID = 54A 0.010 Ω VGS = 5.0V, ID = 54A 0.013 VGS = 4.0V, ID = 45A 2.0 V VDS = VGS, ID = 250µA S VDS = 25V, ID = 54A
25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, T J = 150°C 100 VGS = 16V nA -100 VGS = -16V 130 ID = 54A 25 nC VDS = 44V 67 VGS = 5.0V, See Fig. 6 and 13
12 VDD = 28V 160 ID = 54A ns 43 RG = 1.3Ω, VGS = 5.0V 84 RD = 0.50Ω, See Fig. 10
Between lead, 7.5 nH and center of die contact 5000 VGS = 0V 1100 pF VDS = 25V 390 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 104 showing the A G integral reverse 360 S p-n junction diode. 1.3 V TJ = 25°C, IS = 54A, VGS = 0V 140 210 ns TJ = 25°C, IF = 54A 650 970 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 240µH RG = 25Ω, IAS = 54A. (See Figure 12) ISD ≤ 54A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL2505 data and test conditions Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
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IRL2505S/LPbF
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
100
2.5V
10
10
2.5V 20µs PULSE WIDTH T J = 25°C
1 10
1 0.1
A
100
1 0.1
20µs PULSE WIDTH T J = 175°C
1 10
A
100
VDS , Drain-to-Source Voltage (V)
VDS .