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HAF1002S Dataheets PDF



Part Number HAF1002S
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description P-Channel MOSFET
Datasheet HAF1002S DatasheetHAF1002S Datasheet (PDF)

HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. • Logic level operation (–4 to –6 V Gate drive) • High .

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HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. • Logic level operation (–4 to –6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D 4 4 G Gate resistor Tempe– rature Sencing Circuit 1 1 2 3 Latch Circuit Gate Shut– down Circuit 2 3 S 1. Gate 2. Drain 3. Source 4. Drain HAF1002(L), HAF1002(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS+ VGSS– ID I D(pulse) Note1 Ratings –60 –16 3 –15 –30 –15 Unit V V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg Note2 50 150 –55 to +150 Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd VOP Min –3.5 — — — — — — — –3.5 Typ — — — — — –0.8 –0.35 175 — Max — –1.2 –100 –50 –1 — — — –13 Unit V V µA µA µA mA mA °C V Vi = –8V, VDS = 0 Vi = –3.5V, VDS = 0 Vi = –1.2V, VDS = 0 Vi = –8V, VDS = 0 Vi = –3.5V, VDS = 0 Channel temperature Test Conditions 2 HAF1002(L), HAF1002(S) Electrical Characteristics (Ta = 25°C) Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol I D1 I D2 V(BR)DSS V(BR)GSS+ V(BR)GSS– I GSS+1 I GSS+2 I GSS+3 I GSS– Input current (shut down) I GS(op)1 I GS(op)1 Zero gate voltege drain current I DSS Gate to source cutoff voltage VGS(off) Min –7 — –60 –16 3 — — — — — — — –1.1 — — Typ — — — — — — — — — –0.8 –0.35 — — 100 70 Max — –10 — — — –100 –50 –1 100 — — –250 –2.25 130 90 Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF µs µs µs µs V I F = –15A, VGS = 0 I F = –15A, VGS = 0 diF/ dt =50A/µs t os1 t os2 — — 3.7 1 — — ms ms VGS = –5V, VDD = –12V VGS = –5V, VDD = –24V Note4 Test Conditions VGS = –3.5V, VDS = –2V VGS = –1.2V, VDS = –2V I D = –10mA, VGS = 0 I G = –100µA, VDS = 0 I G = 100µA, VDS = 0 VGS = –8V, VDS = 0 VGS = –3.5V, VDS = 0 VGS = –1.2V, VDS = 0 VGS = 2.4V, VDS = 0 VGS = –8V, VDS = 0 VGS = –3.5V, VDS = 0 VDS = –50 V, VGS = 0 I D = –1mA, VDS = –10V I D = –7.5A, VGS = –4V Note3 I D = –7.5A VGS = –10V Note3 I D = –7.5A, VDS = –10V Note3 VDS = –10V , VGS = 0 f = 1 MHz I D = –7.5A, VGS = –5V RL = 4Ω Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance Output capacitance |yfs| Coss 5 — 10 610 — — Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Over load shut down operation time Note: t d(on) tr t d(off) tf VDF t rr — — — — — 7.5 36 32 29 –1.0 — — — — — — 200 — ns 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. • See characteristics curve of HAF1001. 3 HAF1002(L), HAF1002(S) Package Dimensions Unit: mm (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 11.3 ± 0.5 8.6 ± 0.3 10.0 +0.3 –0.5 (1.4) 10.2 ± 0.3 4.44 ± 0.2 1.3 ± 0.2 (1.5) 11.0 ± 0.5 (1.5) 0.76 ± 0.1 (1.5) 8.6 ± 0.3 10.0 +0.3 –0.5 1.2 ± 0.2 0.86 +0.2 –0.1 1.27 ± 0.2 2.59 ± 0.2 1.27 ± 0.2 0.4 ± 0.1 1.2 ± 0.2 2.54 ± 0.5 0.86 +0.2 –0.1 2.54 ± 0.5 3.0 +0.3 –0.5 0.1 +0.2 –0.1 2.59 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type S type Hitachi Code EIAJ JEDEC LDPAK — — 4 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, .


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