MA26V02

www.DataSheet4U.com Variable Capacitance Diodes MA26V02 Silicon epitaxial planar type Unit: mm For VCO ■ Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.50±0.05 0.25±0.05 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD1V CD4V Capacitance ratio Series resistance * Conditions VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 4 V, f = 470 MHz Min Typ Max 10 18.0 7.3 2.1 20.0 9.0 2.6 0.3 CD1V /CD4V rD Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15±0.05 0.05±0.03 0.35±0.01 Unit nA pF  Ω Publication date: November 2003 SKD00073CED 1 MA26V02 IF  V F 180 160 102 CD  VR f = 1 MHz Ta = 25°C 1.032 f = 1 MHz CD  Ta Diode capacitance CD (pF) Forward current IF (mA) 140 120 100 80 60 40 20 0 Ta = 60°C 1.024 VR = 1 V CD (Ta) CD (Ta = 25°C) 1.016 4V −40°C 25°C 10 1.008 1.000 0.992 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 0.984 0 2 4 6 8 0 20 40 ...