Silicon epitaxial planar type
www.DataSheet4U.com
Variable Capacitance Diodes
MA26376
Silicon epitaxial planar type
Unit: mm
For UHF wireless teleg...
Description
www.DataSheet4U.com
Variable Capacitance Diodes
MA26376
Silicon epitaxial planar type
Unit: mm
For UHF wireless telegraphic VCO
0.60±0.05
■ Features
Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD
3
2
1 1.00±0.05
0.39+0.01 −0.03
0.15±0.05 0.05±0.03 0.35±0.01
0.25±0.05
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C
0.25±0.05 1
3
0.65±0.01
2 0.05±0.03
1: Anode 2: N.C. 3: Cathode ML3-N2 Package
Marking Symbol: 2T
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Series resistance * Symbol IR CD1V CD3V rD VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz 14.00 6.80 Conditions Min Typ Max 10 16.00 8.90 0.3 Ω Unit nA pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: January 2004
SKD00071CED
1
MA26376
IF V F
120 25°C
CD VR
102 f = 1 MHz Ta = 25°C 1.032 f = 1 MHz
CD Ta
100
Diode capacitance CD (pF)
Forward current IF (mA)
1.024
VR = 1 V
Ta = 60°C
CD (Ta) CD (Ta = 25°C)
80
1.016
3V
60
−40°C
10
1.008
40
1.000
20
0.992
0
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
2
4
6
0.984
0
20
40
60
80
100
Forward voltage VF (...
Similar Datasheet