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IXBT42N170A
Monolithic Bipolar MOS Transistor
Description
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS
Transistor
IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.0V 20ns Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuou...
IXYS Corporation
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