HAD825

HI-SINCERITY MICROELECTRONICS CORP. HAD825 NPN EPITAXIAL PLANAR TRANSISTOR Features Darlington transistor. Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2002.03.06 Page No. : 1/3 Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum Maximum Power Dissipations Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 80 V VCES Collector to Emitter Voltage ...................................................................................... 55 V VEBO Emitter to Base Voltage........................