XN5531

www.DataSheet4U.com Composite Transistors XN05531 (XN5531) Silicon NPN epitaxial planer transistor For high frequency oscillation and mixing 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 6 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 G 3 2 1 (0.65) 0.30+0.10 –0.05 0.50+0.10 –0.05 I Basic Part Number of Element G 10° 1.1+0.2 –0.1 1.1+0.3 –0.1 2SC3130 × 2 elements I Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25˚C) Ratings 15 10 3 50 200 150 –55 to +150 Unit V V V mA mW ˚C 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini6-G1 Package Marking Symbol: 5M Internal Connection 6 Tr1 1 2 3 ˚C 5 4 Tr2 I Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio hFE2/hFE1 ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency Collector to base parameter Common base reverse transfer capacitance *1 (Ta=25˚C) Symbol VCEO VEBO ICBO ICEO hFE1 hFE (small/large)*1 hFE2/hFE1 VCE(sat) Cob fT rbb'·CC Crb Conditions IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 4V, IC = 5mA VCE = 4V, IC = 5mA V...