IRG4PC60F-PPBF

www.DataSheet4U.com PD - 95567 IRG4PC60F-PPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specified application conditions. • Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. • Designed for best performance when used with IR HEXFRED & IR FRED companion diodes. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Maximum Reflow Temperature ‡ Max. 600 90 60 120 120 ± 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) 230 (Time above 183°C should not exceed 100s) Units V A V...