IRFSL3206PBF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 60V 2.4m: 3.0m: cG ID (Silicon Limited) 210A S ID (Package Limited) 120A D D D DS G TO-220AB IRFB3206PbF G Gate DS G D2Pak IRFS3206PbF D Drain DS G TO-262 IRFSL3206PbF S Source Base Part Number IRFB3206PbF IRFSL3206PbF IRFS3206PbF Package Type TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Quantity 50 50 50 800 800 Orderable Part Number IRFB3206PbF IRFSL3206PbF IRFS3206PbF IRFS3206TRLPbF IRFS3206TRRPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characte...