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GSOT24-HT3 Dataheets PDF



Part Number GSOT24-HT3
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description (GSOT03-HT3 - GSOT36-HT3) ESD Protection Diode
Datasheet GSOT24-HT3 DatasheetGSOT24-HT3 Datasheet (PDF)

www.DataSheet4U.com GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors ESD Protection Diode Features • Transient protection for data lines as per IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (cone3 tact) IEC 61000-4-5 (Lightning) see IPPM below • Space saving LLP package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 Top view 1 2 Pin 1 18083 Mechanical Data Case: LLP75-3B Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High tempera.

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www.DataSheet4U.com GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors ESD Protection Diode Features • Transient protection for data lines as per IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (cone3 tact) IEC 61000-4-5 (Lightning) see IPPM below • Space saving LLP package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 Top view 1 2 Pin 1 18083 Mechanical Data Case: LLP75-3B Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: approx. 5.2 mg Parts Table Part GSOT03-HT3 GSOT04-HT3 GSOT05-HT3 GSOT08-HT3 GSOT12-HT3 GSOT15-HT3 GSOT24-HT3 GSOT36-HT3 Ordering code GSOT03-HT3-GS08 GSOT04-HT3-GS08 GSOT05-HT3-GS08 GSOT08-HT3-GS08 GSOT12-HT3-GS08 GSOT15-HT3-GS08 GSOT24-HT3-GS08 GSOT36-HT3-GS08 A3 A4 A5 A6 A7 A8 A9 AA Marking Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Peak power dissipation1) Forward surge current 1) Test condition 8/20 μs pulse 8.3 ms single half sine-wave Symbol PPK IFSM Value 300 7 Unit W A Non-repetitive current pulse and derated above TA = 25 °C Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Operation and storage temperature range Test condition Symbol Tstg, TJ Value - 55 to + 150 Unit °C Document Number 85822 Rev. 1.4, 29-Apr-05 www.vishay.com 1 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors Electrical Characteristics Part Number Device Marking Code Rated Stand-off Voltage VWM V GSOT03HT3 GSOT04HT3 GSOT05HT3 GSOT08HT3 GSOT12HT3 GSOT15HT3 GSOT24HT3 GSOT36HT3 A3 A4 A5 A6 A7 A8 A9 AA 3.3 4 5 8 12 15 24 36 Minimum Breakdown Voltage @ 1 mA VBR V 4 5 6 8.5 13.3 16.7 26.7 40 6.5 8.5 9.8 13.4 19 24 43 60 Maximum Clamping Voltage @ IPP = 1 A VC V 7.5 10.5 12.5 15 28 35 60 75 @ IPP = 5 A Maximum Peak Pulse Current tp = 8/20 μs IPPM A 18 17 17 15 12 10 5 2 Maximum Leakage Current @ VWM ID μA 125 125 100 10 2 1 1 1 Maximum Capacitance @ 0 V, 1 MHz C pF 800 800 550 400 185 140 83 80 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 110 IPPM - Peak Pulse Current, % IRSM 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 PPPM - Peak Pulse Power (W) Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 1000 300W, 8/20 μs waveshape 100 td = IPP 2 10 0.1 1.0 10 100 1000 10000 20 25 30 17476 td - Pulse Duration ( μ s ) 17477 t - Time ( μ s ) Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time Figure 2. Pulse Waveform www.vishay.com 2 Document Number 85822 Rev. 1.4, 29-Apr-05 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors 100 Peak Pulse Power 8/20 μ s 80 % Of Rated Power 60 40 20 Average Power 0 17478 0 25 50 75 100 125 150 TL - Lead Temperature °C Figure 3. Power Derating Package Dimensions in mm (Inches) 1 (0.039) 0.3 (0.012) 1 0.4 (0.016) 2 3 0.3 (0.012) 1 (0.039) 0.7 (0.027) 0.15 (0.006) 0.25 (0.010) 1.6 (0.062) ISO Method E 1.6 (0.062) Top View 18057 Document Number 85822 Rev. 1.4, 29-Apr-05 www.vishay.com 3 GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the cust.


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