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PJD15N06L
60V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
RDS(ON), VGS@10V,IDS@10A=40mΩ RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters Fully Characterized Avalanche Voltage and Current Pb free product : 99...
