CIL351

www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTORS CIL351/352 TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 70 75 6.0 200 300 1.72 750 4.29 - 65 to +200 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=100µA, IE=0 Collector Base Voltage VEBO IE=100µA, IC=0 Emitter Base Voltage Collector Cut Off Current DC Current Gain ICBO hFE VCB=20V, IE=0 IC=1mA, VCE=10V CIL351 CIL352 IC=10mA, IB=0.5mA IC=100mA, IB=5mA Base Emitter on Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Transition Frequency VBE (on) IC=10mA, VCE=5V MIN 70 75 6.0 TYP MAX UNIT V V V 25 100 200 250 480 0.25 0.60 1.0 nA Collector Emitter Saturation Voltage *VCE (sat) V V V SYMBOL fT TEST CONDITION IC=10mA, VCE=5V, f=100MHz MIN TYP 100 MAX UNIT MHz *Pulse Condition: Pulse Width <300µ s, Duty Cycle <2% CIL351_352Rev_1 120504E Continental Device India Limited Data Sheet Page ...