ZXMP6A13F

60V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP6A13F SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC converters Power management functions Relay and solenoid driving Motor control ORDERING INFORMATION DEVICE ZXMP6A13FTA ZXMP6A13FTC REEL SIZE 7” 13” TAPE QUANTITY WIDTH PER REEL 8mm 3000 units 8mm 10000 units DEVICE MARKING 7P6 SOT23 PINOUT Top View ISSUE 3 - MAY 2007 1 ZXMP6A13F ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current VGS=10V; VGS=10V; VGS=10V; TA=25°C TA=70°C TA=25°C (b) (b) (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD PD Tj:Tstg LIMIT -60 20 -1.1 -0.8 -0.9 -4.0 -1.2 -4.0 625 5 806 6.5 -55 to +150 UNIT V V A A A A mW mW/°C mW mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL RθJA RθJA VALUE 200 155 UNIT °C...