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HL6339G

Hitachi Semiconductor

(HL6339G / HL6342G) 633nm Lasing Laser Diode

www.DataSheet4U.com HL6339G/42G 633nm Lasing Laser Diode ADE-208-1434A (Z) Rev.1 Apr. 2002 Description The HL6339G/42G...



HL6339G

Hitachi Semiconductor


Octopart Stock #: O-566253

Findchips Stock #: 566253-F

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www.DataSheet4U.com HL6339G/42G 633nm Lasing Laser Diode ADE-208-1434A (Z) Rev.1 Apr. 2002 Description The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Application Measurement Laser analysis systems Laser scanner Features Optical output power Visible light output : 5 mW (CW) : 633 nm Typ (nearly equal to He-Ne gas laser) Low operating current : 55 mA Typ Low operating voltage : 2.3 V Typ TM mode oscillation Package Type HL6339G/42G: G2 Internal Circuit HL6339G 1 3 Internal Circuit HL6342G 1 3 PD LD PD LD 2 2 HL6339G/42G Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO VR(LD) VR(PD) Topr Tstg Value 5 2 30 –10 to +40 –40 to +85 Unit mW V V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Threshold current Operating current Operating voltage Slope efficiency Lasing wavelength Beam divergence parallel to the junction Beam divergence parpendicular to the junction Monitor current Symbol PO Ith IOP VOP ηs λp θ// θ⊥ IS Min 5 — — — 0.40 630 6 25 0.04 Typ — 45 55 2.3 0.65 633 8 30 0.08 Max — 60 70 2.7 0.90 635 11 35 0.14 Unit mW mA mA V mW/mA nm deg. deg. mA PO = 5 mW PO = 5 mW ...




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