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MRF7S19100NBR1

Part Number	MRF7S19100NBR1
Manufacturer	Motorola Semiconductor
Description	RF Power Field Effect Transistors
Published	Dec 30, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 1, 6/2006 RF Power Field...
Datasheet	MRF7S19100NBR1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev.
1, 6/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 17.
5 dB Drain Ef...

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MRF7S19100NBR1 RF Power Field Effect Transistors - Motorola Semiconductor

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