DatasheetsPDF.com

IRHQ7214 Dataheets PDF



Part Number IRHQ7214
Manufacturers International Rectifier
Logo International Rectifier
Description (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Datasheet IRHQ7214 DatasheetIRHQ7214 Datasheet (PDF)

www.DataSheet4U.com PD - 93828A IRHQ7214 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ7214 100K Rads (Si) IRHQ3214 300K Rads (Si) IRHQ4214 IRHQ8214 600K Rads (Si) 1000K Rads (Si) TM 250V, QUAD N-CHANNEL RAD-Hard HEXFET ™ ® MOSFET TECHNOLOGY RDS(on) 2.25Ω 2.25Ω 2.25Ω 2.25Ω ID 1.6A 1.6A 1.6A 1.6A LCC-28 International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technolog.

  IRHQ7214   IRHQ7214



Document
www.DataSheet4U.com PD - 93828A IRHQ7214 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ7214 100K Rads (Si) IRHQ3214 300K Rads (Si) IRHQ4214 IRHQ8214 600K Rads (Si) 1000K Rads (Si) TM 250V, QUAD N-CHANNEL RAD-Hard HEXFET ™ ® MOSFET TECHNOLOGY RDS(on) 2.25Ω 2.25Ω 2.25Ω 2.25Ω ID 1.6A 1.6A 1.6A 1.6A LCC-28 International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 1.6 1.0 6.4 12 0.1 ±20 62 1.6 1.2 3.5 -55 to 150 300 (for 5s) 0.89 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 04/22/03 IRHQ7214 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 250 — — — 2.0 0.9 — — — — — — — — — — — — Typ Max Units — 0.3 — — — — — — — — — — — — — — — 6.1 — — 2.25 4.0 — 25 250 100 -100 19 3.4 7.0 15 7.0 39 42 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 1.0A ➃ VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 1.0A ➃ VDS= 200V, VGS=0V VDS = 200V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 1.6A, VDS = 125V VDD = 125V, ID = 1.6A, VGS = 12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time To.


IRHQ8110 IRHQ7214 IRHQ3214


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)