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Part Number IRHQ63110
Manufacturers International Rectifier
Logo International Rectifier
Description (IRHQ6110 / IRHQ63110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Datasheet IRHQ63110 DatasheetIRHQ63110 Datasheet (PDF)

  IRHQ63110   IRHQ63110
www.DataSheet4U.com PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28) ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω IRHQ6110 100K Rads (Si) 1.1Ω IRHQ63110 300K Rads (Si) 1.1Ω ID 3.0A 3.0A -2.3A -2.3A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperatur.



IRHQ6110 IRHQ63110 IRHQ3110


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