DatasheetsPDF.com

HE8812SG

Part Number	HE8812SG
Manufacturer	Hitachi Semiconductor
Description	GaAlAs Infrared Emitting Diode
Published	Dec 30, 2006
Detailed Description	com HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG...
Datasheet	HE8812SG PDF File

Overview

com HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.
1 Jan.
2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode.
It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features • High efficiency and high output power Package Type • HE8812: SG1 Internal Circuit 1 2 HE8812SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral...

Similar Datasheet

HE8812SG GaAlAs Infrared Emitting Diode - Hitachi Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)