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HE8807SG/FL
GaAlAs Infrared Emitting Diodes
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm.
Features
• • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity (HE8807FL) Wide radiation directivity (HE8807SG) High reliability
Absolute Maximum Ratings (TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 200 3 –20 to +85 –40 to +100 Units mA V °C °C
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HE8807SG/FL
Optical and Electrical Characteristics (TC = 25°C)
Item Optical output power HE8807SG HE8807FL Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Note: Symbol PO PF* λp ∆λ VF IR Ct tr tf
1
Min 10 0.5 800 — — — — — —
Typ 20 1.0 880 30 1.7 — 10 20 20
Max — — 900 — 2.3 100 — — —
Units mW
Test Conditions I F = 150 mA I F = 20 mA
nm nm V µA pF ns ns
I F = 150 mA I F = 150 mA I F = 150 mA VR = 3 V VR = 0 V, f = 1 MHz I F = 50 mA I F = 50 mA
1. PF specification: The optical output within 9 degrees of the acceptance angle.
Typical Characteristic Curves
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HE8807SG/FL
Typical Characteristic Curves (cont)
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HE8807SG/FL
Typical Characteristic Curves (cont)
248
HE8807SG/FL
Typical Characteristic Curves (cont)
249
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