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HE7601SG

Hitachi
Part Number HE7601SG
Manufacturer Hitachi
Description GaAlAs Infrared Emitting Diode
Published Dec 30, 2006
Detailed Description com HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.2 Mar. 2005 Description The HE7601SG ...
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HE7601SG
HE7601SG

Overview
com HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.
2 Mar.
2005 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure.
It is suitable as a light source for optical control devices and sensors.
Features • High efficiency and high output power Package Type • HE7601SG: SG1 Internal Circuit 1 2 HE7601SG Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward v...


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