FTS1011

www.DataSheet4U.com Ordering number : ENN7003 FTS1011 P-Channel Silicon MOSFET FTS1011 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2147A [FTS1011] 0.65 0.95 Low ON-resistance. 2.5V drive. Mounting height 1.1mm. 3.0 0.425 8 5 0.5 4.5 6.4 1 0.25 4 (0.95) 1 : Drain 2 : Source 3 : Source 0.125 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 1.0 Ratings -20 ± 10 --6 -30 1.3 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (1000mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--6A Ratings min --20 --1 ± 10 --0.4 10.5 15 --1.4 typ max Unit V µA µA V S Marking : S1011 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applicatio...